PDL6909 Datasheet, Potens semiconductor

* -60V,-3.2A, RDS(ON) =105mΩ@VGS = -10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available Applications
*.

SOT223 Pin Configuration D S D G G D S BVDSS -60V RDSON 105m ID -3.2A Features
* -60V,-3.2A, RDS(ON) =105m.

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.